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Same model may have multiple batches, images only for reference.
BUZ73ALHXKSA1 Real Image
Same model may have multiple batches, images only for reference.

BUZ73ALHXKSA1

Part No BUZ73ALHXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 5.5A TO220-3
Datasheet
BUZ73ALHXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2V @ 1mA
Max Input Capacitance 840pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 3.5A, 5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 1025474-BUZ73ALHXKSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BUZ73ALHXKSA1 CAD Model

Description

The Infineon Technologies BUZ73ALHXKSA1 is a MOSFET type electronic component.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current at 25°C: 5.5A (Tc)
  • Package: PG-TO-220-3
  • Power Dissipation (Max): 40W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Gate-Source Threshold Voltage: 2V @ 1mA
  • Maximum Rds On at Id,Vgs: 600 mOhm @ 3.5A, 5V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 840pF @ 25V
  • Category: Discrete Semiconductor Products
  • Status: Obsolete (EOL)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: Sufficient

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