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Same model may have multiple batches, images only for reference.
BUZ77B Siemens
Same model may have multiple batches, images only for reference.

BUZ77B

Part No BUZ77B
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series SIPMOS ®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 2.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 690 pF @ 25 V
Power Dissipation (Max) 75W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 573803-BUZ77B
Ultra Librarian 3D Model Ultra Librarian BUZ77B CAD Model

Description

The BUZ77B is a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) from Infineon Technologies, belonging to the SIPMOS® series.

  • Type: N-Channel FET
  • Vdss: 600V
  • Id: 2.9A @ 25°C
  • Rds On: 3.5 Ohm @ 1.7A and 10V Vgs
  • Vgs(th): 4V @ 1mA
  • Power Dissipation: 75W @ 25°C Tc
  • Package: Through-hole, TO-220-3
  • Vgs: ±20V
  • Operating Temperature: -55°C to 150°C
  • Market Status: Active
  • Applications: Various discrete semiconductor applications

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