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Same model may have multiple batches, images only for reference.
BUZ80A Infineon Technologies
Same model may have multiple batches, images only for reference.

BUZ80A

Part No BUZ80A
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 3.6A TO-220AB
Datasheet
BUZ80A Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Input Capacitance 1350pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 100W (Tc)
Maximum Rds On at Id,Vgs 3 Ohm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1025477-BUZ80A
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BUZ80A CAD Model

Description

The Infineon Technologies BUZ80A is a N-Channel MOSFET transistor used in discrete semiconductor products. It has a drain-source breakdown voltage of 800V and a continuous drain current of 3.6A @ 25°C.

  • Manufacturer: Infineon Technologies
  • Channel Type: N-Channel
  • Type: MOSFET Transistor
  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current: 3.6A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Input Capacitance: 1350pF @ 25V
  • Package: TO-220AB
  • Mounting: Through-Hole
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Compliance: ROHS

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