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FF150R17KE4HOSA1
Same model may have multiple batches, images only for reference.

FF150R17KE4HOSA1

Part No FF150R17KE4HOSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Modules
Description MODULE IGBT 1700V AG-62MM-1
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules
Mfr Infineon Technologies
Series C
Package Tray
Product Status Active
IGBT Type Trench Field Stop
Configuration 2 Independent
Voltage - Collector Emitter Breakdown (Max) 1700 V
Current - Collector (Ic) (Max) 150 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 150A
Current - Collector Cutoff (Max) 1 mA
Input Capacitance (Cies) @ Vce 12 nF @ 25 V
Input Standard
NTC Thermistor No
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module
Base Product Number FF150R17
Standard Package 10 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 871728-FF150R17KE4HOSA1
Ultra Librarian 3D Model Ultra Librarian FF150R17KE4HOSA1 CAD Model

Description

The 871728-FF150R17KE4HOSA1 is an IGBT (Insulated Gate Bipolar Transistor) module used in power electronic applications.

  • Category: IGBTs - IGBT Modules
  • Series: C series
  • Package: Tray
  • Standard Package: 10 pieces
  • Configuration: 2 independent IGBTs
  • Input Type: Standard
  • IGBT Type: Trench Field Stop
  • Maximum Collector-Emitter Breakdown Voltage: 1700 V
  • Maximum Collector Current: 150 A
  • Vce(on): 2.3V @ 15V gate-emitter voltage and 150A collector current
  • Maximum Collector Cutoff Current: 1 mA
  • Input Capacitance: 12 nF @ 25 Vce voltage
  • NTC Thermistor: No
  • Mounting: Chassis Mounting
  • Package: Module
  • Supplier Device Package: Module
  • Temperature Range: -40°C to 150°C
  • ECCN: EAR99
  • MSL Level: 1
  • REACH Status: Unaffected
  • HTSUS Code: 8541.29.0095
  • Manufacturer: Infineon Technologies
  • Status: Active

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