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YGD45N65U1 Shanghai Lu-Semi Technology Co., Ltd. – Price, Stock & Datasheet
Same model may have multiple batches, images only for reference.

YGD45N65U1

Part No YGD45N65U1
Manufacturer Shanghai Lu-Semi Technology Co., Ltd.
Catalog IGBTs - Modules
Description 166W 90A 650V TO-3P Single IGBTs RoHS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Package TO-3P
Pd - Power Dissipation 166W
Td(off) 129ns
Td(on) 48ns
Operating Temperature -40℃~+175℃
Current - Collector(Ic) 90A
Collector-Emitter Breakdown Voltage (Vces) 650V
Reverse Transfer Capacitance (Cres) 38pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic) 4V@250uA
Vce Saturation(VCE(sat)) 1.85V@45A,15V
Switching Energy(Eoff) 480uJ
Turn-On Energy (Eon) 2.2mJ
Input Capacitance(Cies) 2.19nF
Output Capacitance(Coes) 98pF
Gate Charge(Qg) 85nC@15V
Ultra Librarian 3D Model Ultra Librarian YGD45N65U1 CAD Model

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