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FF300R12KE4HOSA1

Part No FF300R12KE4HOSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Modules
Description IGBT MODULE VCES 600V 300A
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon Technologies
IGBT Type Trench Field Stop
Configuration 2 Independent
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 460A
Power - Max 1600W
Vce(on) (Maximum) at Vge, Ic 2.15V at 15V, 300A
Current - Collector Cutoff (Maximum) 5mA
Input Capacitance (Cies) at Vce 19nF at 25V
Input Standard
NTC Thermistor Yes
Temperature Range - Operating -40°C ~ 150°C
Mounting Style Chassis Mount
Manufacturer Package Module
Supplier Device Package Module
Manufacturer Pack Quantity 10
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 814003-FF300R12KE4HOSA1
Ultra Librarian 3D Model Ultra Librarian FF300R12KE4HOSA1 CAD Model

Description

The Infineon Technologies FF300R12KE4HOSA1 is a module IGBT transistor designed for use in discrete semiconductor products.

  • Maximum Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Collector Current: 460A
  • Maximum Power Output: 1600W
  • Configuration: 2 Independent IGBTs
  • Mounting Style: Chassis Mount
  • NTC Thermistor: Yes
  • Temperature Range: -40°C to 150°C
  • Popularity: Low
  • Supply and Demand Status: Limited
  • Manufacturer Pack Quantity: 10
  • MSL Level: 1

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