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Same model may have multiple batches, images only for reference.
GS61008P-MR Infineon Technologies – Price, Stock & Datasheet
Same model may have multiple batches, images only for reference.

GS61008P-MR

Part No GS61008P-MR
Manufacturer Infineon Technologies
Catalog Transistors – FETs, MOSFETs – Single
Description GS61008P-MR
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Product Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 27A, 6V
Vgs(th) (Max) @ Id 2.6V @ 7mA
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 6 V
Vgs (Max) +7V, -10V
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 50 V
Operating Temperature -55°C ~ 150°C
Mounting Type Surface Mount
Package / Case 5-SMD, No Lead
Ultra Librarian 3D Model Ultra Librarian GS61008P-MR CAD Model

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