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Same model may have multiple batches, images only for reference.
TK31E60X,S1X
Same model may have multiple batches, images only for reference.

TK31E60X,S1X

Part No TK31E60X,S1X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors – FETs, MOSFETs – Single
Description MOSFET N-CH 600V 30.8A TO220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 88mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 300 V
Power Dissipation (Max) 230W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Case / Package TO-220-3
Package Tube
Supply and Demand Status Shortage
Win Source Part Number 1495181-TK31E60X,S1X
Ultra Librarian 3D Model Ultra Librarian TK31E60X,S1X CAD Model

Description

N

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