The IAUT165N08S5N029ATMA2 is a N-Channel MOSFET (Metal Oxide) transistor from Infineon Technologies.

• Channel Type: N-Channel MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80 V
• Current - Continuous Drain (Id) @ 25°C: 165A (Tc)
• Maximum Rds On: 2.9mOhm @ 80A, 10V
• Package: PG-HSOF-8-1
• Gate Charge (Qg) (max) @ Vgs: 90 nC @ 10 V
• Input Capacitance (Ciss) (max) @ Vds: 6370 pF @ 40 V
• Vgs (max): ±20V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Applications: Discrete Semiconductor Products such as Transistors - FETs, MOSFETs - Single