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IDH04S60CAKSA1

Part No IDH04S60CAKSA1
Manufacturer Infineon Technologies
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 600V 4A TO220-2 / Diode Silicon Carbide Schottky 600 V 4A (DC) Through Hole PG-TO220-2-2
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr Infineon Technologies
Series CoolSiC™+
Package Tube
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 4A (DC)
Voltage - Forward (Vf) (Max) @ If 1.9 V @ 4 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 50 µA @ 600 V
Capacitance @ Vr, F 130pF @ 1V, 1MHz
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package PG-TO220-2-2
Operating Temperature - Junction -55°C ~ 175°C
Base Product Number IDH04
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Other Names IDH04S60C-ND,2156-IDH04S60CAKSA1,IDH04S60C,INFINFIDH04S60CAKSA1,SP000657976
Standard Package 500
Win Source Part Number 1064303-IDH04S60CAKSA1
Ultra Librarian 3D Model Ultra Librarian IDH04S60CAKSA1 CAD Model

Description

The Infineon Technologies IDH04S60CAKSA1 is a Silicon Carbide Schottky diode with a voltage - DC reverse (Vr) (Max) of 600V and a current - average rectified (Io) of 4A (DC).

  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 600 V
  • Capacitance @ Vr, F: 130pF @ 1V, 1MHz
  • Package: TO-220-2

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