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IGP01N120H2 Real Image
Same model may have multiple batches, images only for reference.

IGP01N120H2

Part No IGP01N120H2
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description POWER BIPOLAR TRANSISTOR NPN
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Infineon Technologies
Package Bulk
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 3.2 A
Current - Collector Pulsed (Icm) 3.5 A
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 1A
Power - Max 28 W
Switching Energy 140µJ
Input Type Standard
Gate Charge 8.6 nC
Td (on/off) @ 25°C 13ns/370ns
Test Condition 800V, 1A, 241Ohm, 15V
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package PG-TO220-3-1
Standard Package 507 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 602578-IGP01N120H2
Ultra Librarian 3D Model Ultra Librarian IGP01N120H2 CAD Model

Description

The 602578-IGP01N120H2 is a single IGBT transistor designed for use in discrete semiconductor products.

  • Collector-Emitter Breakdown Voltage (Vce): 1200V
  • Maximum Power Rating: 28W
  • IGBT Type: Single
  • Gate Charge: 8.6nC
  • Package: TO-220-3
  • Mounting: Through-hole
  • Temperature Range: -40°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $1.0511 $68.3215
150+ $0.8625 $129.3750
235+ $0.8356 $196.3660
320+ $0.8085 $258.7200
415+ $0.7816 $324.3640
555+ $0.7008 $388.9440
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,700 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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