The 602578-IGP01N120H2 is a single IGBT transistor designed for use in discrete semiconductor products. With a collector-emitter breakdown voltage (Vce) of 1200V and a maximum power rating of 28W, this transistor is suitable for high voltage and power applications. The IGBT type and gate charge of 8.6nC ensure efficient switching and low power loss. The TO-220-3 package allows for easy through-hole mounting, making it suitable for a wide range of electronic devices. With a temperature range of -40°C to 150°C, the 602578-IGP01N120H2 can operate in various environments. Whether you need to control high voltage or power in your circuit, this IGBT transistor is a reliable choice.