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Same model may have multiple batches, images only for reference.
IGP01N120H2XKSA1 Real Image
Same model may have multiple batches, images only for reference.

IGP01N120H2XKSA1

Part No IGP01N120H2XKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 3.2A 28W TO220-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 3.2A
Pulsed Collector Current 3.5A
Collector-emitter saturation voltage(Max) 2.8V @ 15V, 1A
Maximum Power Dissipation 28W
Total Switching Energy(Ets) 140μJ
Input Type Standard
Gate Charge 8.6nC
Turn-on and Turn-off delay time 13ns/370ns
Testing Conditions 800V, 1A, 241 Ohm, 15V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3
Win Source Part Number 1045138-IGP01N120H2XKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IGP01N120H2XKSA1 CAD Model

Description

The Infineon Technologies IGP01N120H2XKSA1 is an IGBT type semiconductor product designed for various applications.

  • VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Current Collector: 3.2A
  • Collector-Emitter Saturation Voltage (Max): 2.8V @ 15V, 1A
  • Gate Charge: 8.6nC
  • Mounting Type: Through Hole
  • Package: PG-TO220-3
  • Maximum Power Dissipation: 28W
  • Pulsed Collector Current: 3.5A
  • Turn-On Delay Time: 13ns
  • Turn-Off Delay Time: 370ns
  • Testing Conditions: 800V, 1A, 241 Ohm, 15V
  • Product Status: Obsolete (EOL)
  • Popularity: medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0082 $60.4920
140+ $0.8274 $115.8360
220+ $0.8015 $176.3300
300+ $0.7756 $232.6800
390+ $0.7497 $292.3830
520+ $0.6722 $349.5440
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MOQ: 60 pcs
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