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Same model may have multiple batches, images only for reference.
IHW30N120R5XKSA1
Same model may have multiple batches, images only for reference.

IHW30N120R5XKSA1

Part No IHW30N120R5XKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description HOME APPLIANCES 14 / IGBT Trench Field Stop 1200 V 60 A 330 W Through Hole PG-TO247-3
Datasheet
IHW30N120R5XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Infineon Technologies
Series TrenchStop™
Package Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 60 A
Current - Collector Pulsed (Icm) 90 A
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 30A
Power - Max 330 W
Switching Energy 1.1mJ (off)
Input Type Standard
Gate Charge 235 nC
Td (on/off) @ 25°C -/330ns
Test Condition 600V, 30A, 10Ohm, 15V
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package PG-TO247-3
Base Product Number IHW30N120
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001607184
Standard Package 30
Win Source Part Number 988709-IHW30N120R5XKSA1
Ultra Librarian 3D Model Ultra Librarian IHW30N120R5XKSA1 CAD Model

Description

The 988709-IHW30N120R5XKSA1 is a single IGBT transistor from Infineon Technologies.

  • Series: TrenchStop™
  • IGBT Type: Trench Field Stop IGBT
  • Maximum Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Collector Current: 60A
  • Power Dissipation: 330W
  • Gate Charge: 235nC
  • Package: TO-247-3
  • Mounting: Through-hole
  • Temperature Range: -40°C to 175°C
  • Protection: Over-current and over-temperature
  • Reverse Polarity Protection: Yes

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