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IMBF170R450M1XTMA1

Part No IMBF170R450M1XTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description SICFET N-CH 1700V 9.8A TO263-7 / N-Channel 1700 V 9.8A (Tc) 107W (Tc) Surface Mount PG-TO263-7-13
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolSiC™
Package Tape & Reel
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1700 V
Current - Continuous Drain (Id) @ 25°C 9.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 12V, 15V
Rds On (Max) @ Id, Vgs 450mOhm @ 2A, 15V
Vgs(th) (Max) @ Id 5.7V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 12 V
Vgs (Max) +20V, -10V
Input Capacitance (Ciss) (Max) @ Vds 610 pF @ 1000 V
Power Dissipation (Max) 107W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7-13
Package / Case TO-263-8, D²Pak (7 Leads + Tab) , TO-263CA
Base Product Number IMBF170
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1338943-IMBF170R450M1XTMA1
Ultra Librarian 3D Model Ultra Librarian IMBF170R450M1XTMA1 CAD Model

Description

The Infineon IMBF170R450M1XTMA1 is a SiCFET (Silicon Carbide) N-Channel FET type transistor.

  • Mfr: Infineon
  • Type: SiCFET (Silicon Carbide) N-Channel FET
  • Drain to Source Voltage (Vdss): 1700 V
  • Power Dissipation: 107W (Tc)
  • Package/Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
  • Vgs (Max): +20V, -10V
  • Temperature Range: -55°C ~ 175°C (TJ)
  • Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 2A, 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 1000 V

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $6.6001 $52.8008
19+ $5.4155 $102.8945
29+ $5.2462 $152.1398
40+ $5.0770 $203.0800
51+ $4.9078 $250.2978
69+ $4.4001 $303.6069
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Availability: 8,728 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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