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Same model may have multiple batches, images only for reference.
IMW120R045M1XKSA1 Real Image
Same model may have multiple batches, images only for reference.

IMW120R045M1XKSA1

Part No IMW120R045M1XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description SICFET N-CH 1.2KV 52A TO247-3  /  N-Channel 1200 V 52A (Tc) 228W (Tc) Through Hole PG-TO247-3-41
Datasheet
IMW120R045M1XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolSiC™
Package Tube
Product Status Not For New Designs
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 59mOhm @ 20A, 15V
Vgs(th) (Max) @ Id 5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 15 V
Vgs (Max) +20V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 800 V
Power Dissipation (Max) 228W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-41
Package / Case TO-247-3
Base Product Number IMW120
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001346254
Standard Package 30
Win Source Part Number 1065101-IMW120R045M1XKSA1
Ultra Librarian 3D Model Ultra Librarian IMW120R045M1XKSA1 CAD Model

Description

The 1065101-IMW120R045M1XKSA1 is a high-performance N-Channel SiCFET transistor that is designed for use in a variety of applications.

  • Maximum Voltage Breakdown: 1200 V
  • Continuous Drain Current: 52A (Tc)
  • Rds On: 59mOhm @ 20A, 15V
  • Temperature Range: -55°C ~ 175°C (TJ)
  • Gate Charge: 52 nC @ 15 V
  • Package: TO-247-3
  • Alternative Part: IMW120R045M1XKSA1IMW120R045M1

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12+ $13.4965 $161.9580
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20+ $12.6258 $252.5160
27+ $11.3196 $305.6292
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