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Same model may have multiple batches, images only for reference.
IPA086N10N3 G Real Image
Same model may have multiple batches, images only for reference.

IPA086N10N3 G

Part No IPA086N10N3 G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 45A TO220-FP
Datasheet
IPA086N10N3 G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Vgs(th) (Maximum) @ Id 3.5V @ 75μA
Gate Charge (Qg) (Maximum) @ Vgs 55nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 3980pF @ 50V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 37.5W (Tc)
Rds On (Maximum) @ Id, Vgs 8.6 mOhm @ 45A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package PG-TO220-FP
Package TO-220-3 Full Pack
Win Source Part Number 760022-IPA086N10N3 G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPA086N10N3 G CAD Model

Description

This product is a MOSFET technology.

  • Supply and Demand Status: Limited
  • Technology: MOSFET
  • Current: 45A (Tc)
  • Packaging: TO-220-3 Full Pack
  • Mounting Style: Through hole
  • Operating Temperature Range: -55°C ~ 175°C (TJ)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Channel Type: N

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