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Same model may have multiple batches, images only for reference.
IPA105N15N3GXKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPA105N15N3GXKSA1

Part No IPA105N15N3GXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 37A TO220-FP  /  N-Channel 150 V 37A (Tc) 40.5W (Tc) Through Hole PG-TO220-FP
Datasheet
IPA105N15N3GXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Rds On (Max) @ Id, Vgs 10.5mOhm @ 37A, 10V
Vgs(th) (Max) @ Id 4V @ 160µA
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4300 pF @ 75 V
Power Dissipation (Max) 40.5W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-FP
Package / Case TO-220-3 Full Pack
Base Product Number IPA105
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names IPA105N15N3 G,IPA1-ND05N15N3GXKSA1,IPA1-ND05N15N3GXKSA1-ND,SP000677850,IPA105N15N3G,IFEINFIPA105N15N3GXKSA1,IPA105N15N3 G-ND,2156-IPA105N15N3GXKSA1
Standard Package 50
Win Source Part Number 1026059-IPA105N15N3GXKSA1
Ultra Librarian 3D Model Ultra Librarian IPA105N15N3GXKSA1 CAD Model

Description

The IPA105N15N3GXKSA1 is an OptiMOS™ MOSFET type device that has a drain to source voltage of 600 V and a continuous drain current of 10.6A @ 25°C.

  • Drain to Source Voltage: 600 V
  • Continuous Drain Current: 10.6A @ 25°C
  • Rds On (Max): 380mOhm @ 3.8A, 10V
  • Vgs(th) (Max): 3.5V @ 320µA
  • Package: TO-220-3 Full Pack
  • Standard Package: 50 units
  • REACH: unaffected
  • ECCN: EAR99

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