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Same model may have multiple batches, images only for reference.
IPA180N10N3GXKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPA180N10N3GXKSA1

Part No IPA180N10N3GXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 28A TO220-FP
Datasheet
IPA180N10N3GXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.5V @ 35μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 1800pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 18 mOhm @ 28A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 1045725-IPA180N10N3GXKSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPA180N10N3GXKSA1 CAD Model

Description

The IPA180N10N3GXKSA1 is a N-Channel MOSFET from Infineon Technologies.

  • FET Type: N-Channel
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Vgs(th) (Max) @ Id: 3.5V @ 35μA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 28A, 10V
  • Power Dissipation (Max) @ Tc: 30 W
  • Package / Case: PG-TO220FP
  • Mounting Type: Through Hole

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2810 $64.0500
110+ $1.0512 $115.6320
175+ $1.0182 $178.1850
235+ $0.9854 $231.5690
305+ $0.9526 $290.5430
410+ $0.8540 $350.1400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,500 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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