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IPA60R099C7XKSA1

Part No IPA60R099C7XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 12A TO220-FP  /  N-Channel 600 V 12A (Tc) 33W (Tc) Through Hole PG-TO220-FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™ C7
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 99mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id 4V @ 490µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1819 pF @ 400 V
Power Dissipation (Max) 33W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-FP
Package / Case TO-220-3 Full Pack
Base Product Number IPA60R099
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names INFINFIPA60R099C7XKSA1,2156-IPA60R099C7XKSA1,SP001297996
Standard Package 500
Win Source Part Number 992463-IPA60R099C7XKSA1
Ultra Librarian 3D Model Ultra Librarian IPA60R099C7XKSA1 CAD Model

Description

The IPA60R099C7XKSA1 is an N-channel MOSFET transistor from Infineon Technologies.

  • Series: CoolMOS™ C7
  • Power Dissipation: 33 W (Tc)
  • Voltage Breakdown: 600 V (max)
  • Drain Current: 12 A (Tc)
  • Rds On: 99mOhm @ 9.7A, 10V
  • Mounting: Through-hole
  • Package: TO-220-3 Full Pack
  • Gate Charge: 42 nC @ 10 V
  • Input Capacitance: 1819 pF @ 400 V
  • Drive Voltage: 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $4.4090 $61.7260
32+ $3.6177 $115.7664
50+ $3.5047 $175.2350
69+ $3.3915 $234.0135
89+ $3.2786 $291.7954
118+ $2.9394 $346.8492
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,380 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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