The Infineon Technologies 068940-IPA60R125CP is an N-Channel MOSFET with a drain-source breakdown voltage of 650V and a continuous drain current of 25A @ 25°C. The device has a maximum power dissipation of 35W (Tc) and a maximum Rds On of 125 mOhm @ 16A, 10V. The gate-source threshold voltage is 3.5V @ 1.1mA and the maximum gate charge is 70nC @ 10V. The device has a maximum input capacitance of 2500pF @ 100V and a maximum gate-source voltage of ±20V. The device is packaged in a PG-TO-220-FP case and is suitable for use in various applications.