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Same model may have multiple batches, images only for reference.
IPA60R125P6XKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPA60R125P6XKSA1

Part No IPA60R125P6XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V TO220FP-3 / Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-220FP Tube
Datasheet
IPA60R125P6XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series CoolMOS P6
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 960μA
Gate Charge (Qg) (Maximum) @ Vgs 56nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2660pF @ 100V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 34W (Tc)
Rds On (Maximum) @ Id, Vgs 125 mOhm @ 11.6A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package PG-TO-220-FP
Package TO-220-3 Full Pack
Win Source Part Number 776832-IPA60R125P6XKSA1
Popularity Medium
Supply and Demand Status Limited
Family Name IPA60R125P6
Introduction Date March 07, 2014
ECCN EAR99
Country of Origin China, Malaysia, Philippines
Halogen Free Compliant
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian IPA60R125P6XKSA1 CAD Model

Description

The Infineon Technologies IPA60R125P6XKSA1 is a discrete semiconductor product that is ideal for various applications that require high-performance power solutions.

  • Drain-Source Voltage (Vdss): 600V (maximum)
  • Continuous Drain Current (Tc): 30A
  • Operating Temperature (TJ): -55°C to 150°C
  • Gate-Source Voltage (VGS): ±20V

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Quantity Unit Price Ext. Price
15+ $4.1200 $61.8000
35+ $3.3806 $118.3210
53+ $3.2749 $173.5697
73+ $3.1693 $231.3589
95+ $3.0637 $291.0515
127+ $2.7467 $348.8309
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Availability: 8,000 pieces
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