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IPA60R230P6

Part No IPA60R230P6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description IPA60R230 - 600V COOLMOS N-CHANN
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 16.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 230mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 530µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1450 pF @ 100 V
Power Dissipation (Max) 33W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-111
Package / Case TO-220-3 Full Pack
Standard Package 1 pcs
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 603291-IPA60R230P6
Ultra Librarian 3D Model Ultra Librarian IPA60R230P6 CAD Model

Description

The IPA60R230P6 is an N-Channel MOSFET transistor from Infineon Technologies. It belongs to the CoolMOS™ series of transistors, designed for power electronics applications.

  • Drain-Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 16.8A @ case temperature of 25°C
  • Maximum On-Resistance (Rds On): 230mOhm @ drain current of 6.4A and gate-source voltage of 10V
  • Gate-Source Threshold Voltage (Vgs(th)): 4.5V @ drain current of 530μA
  • Maximum Power Dissipation: 33W @ case temperature of 25°C
  • Application: Power supplies, motor control, and lighting systems
  • Product Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.4833 $59.3320
85+ $1.3876 $117.9460
130+ $1.3398 $174.1740
190+ $1.2441 $236.3790
245+ $1.1963 $293.0935
305+ $1.1485 $350.2925
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 72,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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