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Same model may have multiple batches, images only for reference.
IPA60R600C6XKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPA60R600C6XKSA1

Part No IPA60R600C6XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 7.3A TO220-FP
Datasheet
IPA60R600C6XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 200μA
Max Gate Charge 20.5nC @ 10V
Max Input Capacitance 440pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 28W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 2.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-FP
Dimension TO-220-3 Full Pack
Win Source Part Number 1045737-IPA60R600C6XKSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPA60R600C6XKSA1 CAD Model

Description

The Infineon Technologies IPA60R600C6XKSA1 is an N-channel MOSFET with a drain-source breakdown voltage of 600V and a continuous drain current of 7.3A @ 25°C.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 7.3A @ 25°C
  • Package: PG-TO-220-FP
  • Maximum Power Dissipation: 28W
  • Maximum Rds On: 600 mOhm @ 2.4A, 10V
  • Gate-Source Threshold Voltage: 3.5V @ 200μA
  • Maximum Gate Charge: 20.5nC @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4692 $58.6500
305+ $0.3850 $117.4250
465+ $0.3730 $173.4450
640+ $0.3610 $231.0400
830+ $0.3490 $289.6700
1,110+ $0.3128 $347.2080
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 180 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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