The IPA65R065C7 is a CoolMOS™ C7 series power MOSFET from Infineon Technologies. This superjunction MOSFET is designed for high-voltage, high-efficiency power conversion applications. It offers ultra-low on-state resistance (Rds(on)) and excellent switching performance, enabling significant improvements in system efficiency and power density.

Applications

• Server power supplies
• Telecom power supplies
• Solar inverters
• Uninterruptible power supplies (UPS)
• Industrial power supplies

Features

• Ultra-low on-state resistance (Rds(on))
• Optimized switching performance
• Low gate charge (Qg)
• Fast body diode
• Robust avalanche ruggedness
• RoHS compliant

Benefits

• Increased system efficiency, reducing energy consumption and heat dissipation
• Higher power density, enabling smaller and more compact power supply designs
• Improved reliability due to robust avalanche ruggedness
• Simplified design with fast body diode
• Environmentally friendly due to RoHS compliance

Additional Details

The IPA65R065C7 features a drain-source voltage (Vds) rating of 650V, making it suitable for high-voltage applications. The ultra-low Rds(on) minimizes conduction losses, while the optimized switching performance reduces switching losses. The low gate charge (Qg) contributes to faster switching speeds and lower gate drive losses. The fast body diode improves the performance of hard-switching topologies. The device is typically packaged in a through-hole or surface-mount package, depending on the specific application requirements. This CoolMOS™ C7 MOSFET is designed for demanding power electronics applications where efficiency, power density, and reliability are critical.