The IRFB31N20D is a 200V, N-Channel MOSFET from International Rectifier, designed for high-efficiency power switching applications. This device features a low on-resistance and gate charge, making it suitable for a wide range of power management tasks. Its robust design ensures reliable performance in demanding environments.

Applications:

• Synchronous rectification
• DC-DC converters
• Uninterruptible power supplies (UPS)
• Motor control circuits
• Solar inverters

Features:

• N-Channel MOSFET
• Low on-resistance (RDS(on)): Minimizes power loss during conduction.
• Low gate charge (Qg): Enables fast switching speeds and reduces driver power requirements.
• Avalanche rated: Provides robustness against voltage spikes.
• Dynamic dv/dt Rating: Provides improved ruggedness
• Lead-Free: Compliant with environmental regulations.

Benefits:

• High efficiency: Reduced power losses contribute to higher system efficiency.
• Fast switching speeds: Enables higher frequency operation and improved transient response.
• Simplified design: Low gate charge reduces driver requirements.
• Robustness: Avalanche rating provides protection against voltage transients.
• Reliability: Designed for long-term performance in demanding environments.

Additional Details:

The IRFB31N20D typically features a voltage rating of 200V and a continuous drain current of around 31A. It comes in a TO-220AB package, facilitating easy mounting and heat dissipation. Its thermal resistance ensures efficient heat transfer away from the device, enabling reliable operation even at higher power levels. The gate threshold voltage is precisely controlled, ensuring predictable switching behavior.