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Same model may have multiple batches, images only for reference.
IPA65R190E6 Real Image
Same model may have multiple batches, images only for reference.

IPA65R190E6

Part No IPA65R190E6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 20.2A TO220
Datasheet
IPA65R190E6 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 730μA
Max Gate Charge 73nC @ 10V
Max Input Capacitance 1620pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 34W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 7.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220 Full Pack
Dimension TO-220-3 Full Pack
Win Source Part Number 205218-IPA65R190E6
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPA65R190E6 CAD Model

Description

The IPA65R190E6 is an N-channel MOSFET from Infineon Technologies.

  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current: 20.2A @ 25°C
  • Package: PG-TO220 Full Pack
  • Maximum Power Dissipation: 34W @ Tc
  • Gate-Source Threshold Voltage: 3.5V @ 730μA
  • Max Gate Charge: 73nC @ 10V
  • Maximum Rds On: 190 mOhm @ 7.3A, 10V
  • Maximum Input Capacitance: 1620pF @ 100V
  • Halogen-Free: compliant

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $7.9036 $55.3252
16+ $6.4851 $103.7616
24+ $6.2824 $150.7776
33+ $6.0797 $200.6301
43+ $5.8771 $252.7153
57+ $5.2691 $300.3387
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Availability: 5,000 pieces
MOQ: 7 pcs
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