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Same model may have multiple batches, images only for reference.
IPA65R225C7XKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPA65R225C7XKSA1

Part No IPA65R225C7XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 7A TO220-FP / N-Channel 650 V 7A (Tc) 29W (Tc) Through Hole PG-TO220-FP
Datasheet
IPA65R225C7XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™ C7
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 225mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id 4V @ 240µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 996 pF @ 400 V
Power Dissipation (Max) 29W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-FP
Package / Case TO-220-3 Full Pack
Base Product Number IPA65R225
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001080144,IFEINFIPA65R225C7XKSA1,2156-IPA65R225C7XKSA1
Standard Package 50
Win Source Part Number 1179402-IPA65R225C7XKSA1
Ultra Librarian 3D Model Ultra Librarian IPA65R225C7XKSA1 CAD Model

Description

The IPA65R225C7XKSA1 is an N-channel MOSFET transistor from Infineon Technologies.

  • Channel Type: N-Channel
  • Series: CoolMOS C7
  • Package: TO-220-3 Full Pack
  • Drain-to-Source Voltage: 650V
  • Continuous Drain Current (@ 25°C): 7A
  • Rds On (Max) (@ 4.8A, 10V): 225mOhm
  • Vgs(th) (Max) (@ 240μA): 4V
  • Power Dissipation (Max) (@ Tc): 29W
  • Gate Charge (Qg) (Max) (@ 10V): 20nC
  • Input Capacitance (Ciss) (Max) (@ 400V): 996pF
  • Temperature Range: -55°C to 150°C (TJ)
  • Drive Voltage (Max Rds On, Min Rds On): 10V

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