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Same model may have multiple batches, images only for reference.
IPA65R280C6 Real Image
Same model may have multiple batches, images only for reference.

IPA65R280C6

Part No IPA65R280C6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description POWER FIELD-EFFECT TRANSISTOR, 6
Datasheet
IPA65R280C6 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 950 pF @ 100 V
Power Dissipation (Max) 32W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-111
Package / Case TO-220-3 Full Pack
Standard Package 1 pcs
HTSUS 0000.00.0000
Win Source Part Number 603308-IPA65R280C6
Ultra Librarian 3D Model Ultra Librarian IPA65R280C6 CAD Model

Description

The 603308-IPA65R280C6 is a N-channel MOSFET transistor from Infineon Technologies.

  • Series: CoolMOS™ series
  • Vdss: 650 V
  • Id: 13.8A @ 25°C
  • Rds On (Max): 280mOhm @ 4.4A and 10V
  • Qg: 45 nC @ 10V
  • Ciss: 950 pF @ 100V
  • Operating Temperature: from -55°C to 150°C
  • Package: through hole package (TO-220-3 Full Pack)
  • Product Status: active product
  • Manufacturer: Infineon Technologies

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