The Infineon Technologies IPA65R280C6XKSA1 is an N-Channel MOSFET with a drain-source breakdown voltage of 650V and a continuous drain current of 13.8A at 25°C.

• FET Type: N-Channel
• Voltage - Drain to Source Breakdown (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
• Power Dissipation (Max) @ Tc: 32 W
• Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.4A, 10V
• Package / Case: TO-220 Full Pack
• Dimension: TO-220-3 Full Pack
• Vgs(th) (Max) @ Id: 3.5V @ 440μA
• Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
• Input Capacitance (Ciss) @ Vds: 950 pF @ 100 V