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IPA80R1K0CEXKSA2

Part No IPA80R1K0CEXKSA2
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 5.7A TO220-FP  /  N-Channel 800 V 5.7A (Tc) 32W (Tc) Through Hole PG-TO220-FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™ CE
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 950mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id 3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 785 pF @ 100 V
Power Dissipation (Max) 32W (Tc)
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-FP
Package / Case TO-220-3 Full Pack
Base Product Number IPA80R1
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001313392,2156-IPA80R1K0CEXKSA2,INFINFIPA80R1K0CEXKSA2
Standard Package 50
Win Source Part Number 1002304-IPA80R1K0CEXKSA2
Ultra Librarian 3D Model Ultra Librarian IPA80R1K0CEXKSA2 CAD Model

Description

The IPA80R1K0CEXKSA2 is a discrete semiconductor product that is ideal for various applications that require high-performance power solutions manufactured by Infineon Technologies.

  • Maximum Drain-Source Voltage (Vdss): 800V
  • Continuous Drain Current: 5.7A (Tc)
  • Temperature Range: -40°C to 150°C (TJ)
  • Gate-Source Voltage (VGS): ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.6075 $52.1500
47+ $2.1395 $100.5565
73+ $2.0727 $151.3071
100+ $2.0058 $200.5800
129+ $1.9390 $250.1310
173+ $1.7384 $300.7432
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 111 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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