The Infineon Technologies IPA80R1K4P7XKSA1 is a MOSFET transistor designed for use in electronic devices that require high voltage and current capabilities.

• FET Type: N-Channel
• Design: Super Junction
• Maximum Drain to Source Voltage: 800 V
• Continuous Drain Current: 4A @ 25°C
• Rds On: 1.4Ohm @ 1.4A and 10V
• Gate Charge: 10 nC @ 10V
• Input Capacitance: 250 pF @ 500 Vds
• Package: PG-TO220-3-31
• Operating Temperature: -55°C to 150°C
• Ideal for: power supply applications, motor control circuits, and other high voltage and high current applications.