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Same model may have multiple batches, images only for reference.
IPA95R1K2P7XKSA1
Same model may have multiple batches, images only for reference.

IPA95R1K2P7XKSA1

Part No IPA95R1K2P7XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 950V 6A TO220 / N-Channel 950 V 6A (Tc) 27W (Tc) Through Hole PG-TO220-FP
Datasheet
IPA95R1K2P7XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™ P7
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 950 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.7A, 10V
Vgs(th) (Max) @ Id 3.5V @ 140µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 478 pF @ 400 V
Power Dissipation (Max) 27W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-FP
Package / Case TO-220-3 Full Pack
Base Product Number IPA95R1
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP002314016
Standard Package 50
Win Source Part Number 968018-IPA95R1K2P7XKSA1
Ultra Librarian 3D Model Ultra Librarian IPA95R1K2P7XKSA1 CAD Model

Description

The Infineon Technologies IPA95R1K2P7XKSA1 is a discrete semiconductor product with MOSFET (Metal Oxide) technology.

  • Technology: MOSFET (Metal Oxide)
  • FET Type: N-Channel
  • Drain to Source Voltage: 950V
  • Current-Continuous Drain (Id): 6A (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V
  • Power Dissipation (Max): 27W (Tc)
  • Mounting Type: Through-Hole
  • Package/Case: TO-220-3 Full Pack
  • Supplier Device Package: PG-TO220-FP
  • ECCN: EAR99
  • REACH: Unaffected
  • HTSUS Code: 8541.29.0095
  • Cross-Reference: SP002314016

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