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Same model may have multiple batches, images only for reference.
IPB009N03L G Real Image
Same model may have multiple batches, images only for reference.

IPB009N03L G

Part No IPB009N03L G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 180A TO263-7
Datasheet
IPB009N03L G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 227nC @ 10V
Max Input Capacitance 25000pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 0.95 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-7-3
Dimension TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Win Source Part Number 001844-IPB009N03L G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPB009N03L G CAD Model

Description

The IPB009N03L G is an N-channel MOSFET from Infineon Technologies.

  • Application: Motor control, power supplies, and DC-DC converters
  • Maximum Power Dissipation: 250W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Authenticity: Ensure purchase from a reputable supplier

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Quantity Unit Price Ext. Price
3+ $19.5853 $58.7559
8+ $16.0707 $128.5656
12+ $15.5682 $186.8184
16+ $15.0658 $241.0528
20+ $14.5634 $291.2680
27+ $13.0573 $352.5471
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Availability: 4,775 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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