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Same model may have multiple batches, images only for reference.
IPB017N08N5ATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPB017N08N5ATMA1

Part No IPB017N08N5ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 120A D2PAK
Datasheet
IPB017N08N5ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 280µA
Gate Charge (Qg) (Max) @ Vgs 223 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 16900 pF @ 40 V
Power Dissipation (Max) 375W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IPB017
Standard Package 1,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 874668-IPB017N08N5ATMA1
Ultra Librarian 3D Model Ultra Librarian IPB017N08N5ATMA1 CAD Model

Description

The IPB017N08N5ATMA1 is a N-Channel MOSFET transistor from Infineon Technologies. It is part of the OptiMOS™ series, which is known for its excellent performance and efficiency.

  • Drain to Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 120A @ 25°C
  • Maximum On-Resistance (Rds On): 1.7mOhm @ 100A and 10V
  • Mounting: Surface Mount
  • Package: TO-263-3, D²Pak
  • Gate Charge (Qg): 223nC @ 10V
  • Input Capacitance (Ciss): 16900pF @ 40V
  • Temperature Range: -55°C to 175°C
  • Status: Active

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62+ $5.6493 $350.2566
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