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Same model may have multiple batches, images only for reference.
IPB021N06N3G Real Image
Same model may have multiple batches, images only for reference.

IPB021N06N3G

Part No IPB021N06N3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™ 3
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 196µA
Gate Charge (Qg) (Max) @ Vgs 275 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 23000 pF @ 30 V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 183 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 874677-IPB021N06N3G
Ultra Librarian 3D Model Ultra Librarian IPB021N06N3G CAD Model

Description

The 874677-IPB021N06N3G is an OptiMOS™ 3 N-channel MOSFET transistor.

  • Category: Discrete Semiconductor Products
  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 120A @ 25°C
  • Maximum On-Resistance (Rds On): 2.4mOhm @ 100A and 10V
  • Gate Threshold Voltage (Vgs(th)): 4V @ 196μA
  • Power Dissipation: 250W @ Case Temperature (Tc)
  • Mounting Type: Surface Mount
  • Package/Case Type: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
  • Gate Charge (Qg): 275nC @ 10V
  • Input Capacitance (Ciss): 23000pF @ 30V
  • Status: Active
  • Manufacturer: Infineon Technologies

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