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Same model may have multiple batches, images only for reference.
IPB023N04NGATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPB023N04NGATMA1

Part No IPB023N04NGATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 90A TO263-3
Datasheet
IPB023N04NGATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 95μA
Max Gate Charge 120nC @ 10V
Max Input Capacitance 10000pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 167W (Tc)
Maximum Rds On at Id,Vgs 2.3 mOhm @ 90A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1045755-IPB023N04NGATMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPB023N04NGATMA1 CAD Model

Description

The Infineon Technologies IPB023N04NGATMA1 is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Mounting Type: SMD (SMT)
  • Case/Package: PG-TO263-2
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current (25°C): 90A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 95μA
  • Maximum Gate Charge: 120nC @ 10V
  • Maximum Input Capacitance: 10000pF @ 20V
  • Maximum Rds On (Id,Vgs): 2.3 mOhm @ 90A, 10V
  • Temperature Range: -55°C to 175°C (TJ)
  • Lifecycle Status: Obsolete (EOL)

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