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Same model may have multiple batches, images only for reference.
IPB04N03LA G Real Image
Same model may have multiple batches, images only for reference.

IPB04N03LA G

Part No IPB04N03LA G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 80A TO-263
Datasheet
IPB04N03LA G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 60μA
Max Gate Charge 32nC @ 5V
Max Input Capacitance 3877pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 107W (Tc)
Maximum Rds On at Id,Vgs 3.9 mOhm @ 55A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 100588-IPB04N03LA G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB04N03LA G CAD Model

Description

The Infineon Technologies 100588-IPB04N03LA G is an obsolete (EOL) product falling under the category of discrete semiconductor products.

  • Status: Obsolete (EOL)
  • Category: Discrete semiconductor products
  • Supply and demand: balanced
  • Mounting: SMD (SMT)
  • Case/Package: PG-TO263-3-2
  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current at 25°C: 80A (Tc)
  • Maximum Rds On at Id,Vgs: 3.9 mOhm @ 55A, 10V

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