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IPB04N03LAT

Name: IPB04N03LAT
Brand: Infineon Technologies
SKU: 435950
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	IPB04N03LAT
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 25V 80A D2PAK
Datasheet	IPB04N03LAT Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel - TR
Status	Obsolete(EOL)
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	25V
Continuous Drain Current at 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Gate-Source Threshold Voltage	2V @ 60μA
Max Gate Charge	32nC @ 5V
Max Input Capacitance	3877pF @ 15V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	107W (Tc)
Maximum Rds On at Id,Vgs	3.9 mOhm @ 55A, 10V
Temperature Range - Operating	-55°C to 175°C (TJ)
Mounting	SMD (SMT)
Case / Package	PG-TO263-3-2
Dimension	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number	1021291-IPB04N03LAT
Popularity	Medium
Supply and Demand Status	Sufficient
Ultra Librarian 3D Model	Ultra Librarian IPB04N03LAT CAD Model

Alternative Products

Description

The Infineon Technologies 1021291-IPB04N03LAT MOSFET is a surface-mount device with N-channel polarity.

Mounting Type: Surface Mount
Polarity: N-Channel
Power Dissipation: 107W (Tc)
Drain-Source Breakdown Voltage: 25V
Rds On: 3.9 mOhm @ 55A, 10V
Gate-Source Threshold Voltage: 2V @ 60μA
Gate Charge: 32nC @ 5V
Input Capacitance: 3877pF @ 15V
Gate-Source Voltage: ±20V
Package: PG-TO263-3-2
Dimensions: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category: Discrete Semiconductor Products
Status: Obsolete (EOL)
Temperature Range: -55°C to 175°C (TJ)
Supply and Demand Status: Sufficient

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