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Same model may have multiple batches, images only for reference.
IPB06N03LBG Real Image
Same model may have multiple batches, images only for reference.

IPB06N03LBG

Part No IPB06N03LBG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 50A D2PAK
Datasheet
IPB06N03LBG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 40μA
Max Gate Charge 22nC @ 5V
Max Input Capacitance 2782pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 6.3 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 068967-IPB06N03LBG
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB06N03LBG CAD Model

Description

The Infineon Technologies 068967-IPB06N03LBG is an N-Channel MOSFET that comes in PG-TO263-3 package.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 50A @ 25°C
  • Power Dissipation: 83W (Tc)
  • Gate-Source Threshold Voltage: 2V @ 40μA
  • Max Gate Charge: 22nC @ 5V
  • Maximum Rds On: 6.3 mOhm @ 50A, 10V
  • Maximum Input Capacitance: 2782pF @ 15V
  • Status: obsolete (EOL)
  • Popularity: medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9794 $58.7640
145+ $0.8039 $116.5655
225+ $0.7785 $175.1625
310+ $0.7542 $233.8020
400+ $0.7288 $291.5200
535+ $0.6537 $349.7295
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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