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IPB100N04S303ATMA1

Part No IPB100N04S303ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 100A TO263-3
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 150μA
Max Gate Charge 145nC @ 10V
Max Input Capacitance 9600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 214W (Tc)
Maximum Rds On at Id,Vgs 2.5 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 129931-IPB100N04S303ATMA1
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian IPB100N04S303ATMA1 CAD Model

Description

The Infineon Technologies IPB100N04S303ATMA1 is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 100A @ 25°C
  • Temperature Range: -55°C to 175°C
  • Package: PG-TO263-3-2
  • Maximum Rds On at Id,Vgs: 2.5 mOhm @ 80A, 10V
  • Status: not for new designs
  • Popularity: medium
  • Quantity per Package: 1k pieces

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.1631 $54.1203
30+ $3.4159 $102.4770
46+ $3.3092 $152.2232
63+ $3.2024 $201.7512
81+ $3.0957 $250.7517
109+ $2.7754 $302.5186
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,590 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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