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IPB100N06S2-05

Part No IPB100N06S2-05
Manufacturer Infineon Technologies
Description OptiMOS Power-Transistor
Sample
Rohs State rohs
ECAD Module
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Manufacturer Infineon Technologies
Win Source Part Number 1186019-IPB100N06S2-05
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPB100N06S2-05 CAD Model

Description

The IPB100N06S2-05 is a OptiMOS™ power MOSFET manufactured by Infineon Technologies. It is an N-channel enhancement mode MOSFET designed for high-efficiency power conversion and switching applications. This device is particularly well-suited for use in synchronous rectification, DC-DC converters, and motor control systems due to its low on-state resistance and fast switching capabilities.

Applications:

  • Synchronous Rectification: Improves efficiency in power supplies by replacing diodes with MOSFETs.
  • DC-DC Converters: Used in voltage regulators for various electronic devices.
  • Motor Control: Controls the speed and torque of DC motors.
  • Automotive Applications: Employed in automotive electronic systems, such as power distribution and motor drives.
  • Power Supplies: Used in server, telecom, and industrial power supplies.

Features:

  • N-Channel Enhancement Mode: Offers a specific polarity for circuit design.
  • OptiMOS™ Technology: Infineon's advanced MOSFET technology for high efficiency and low losses.
  • Low On-State Resistance (RDS(on)): Minimizes power dissipation and improves efficiency. The '05' in the part number indicates a typical RDS(on) of 5 mOhms.
  • Fast Switching Speed: Enables efficient switching operation.
  • Avalanche Rated: Withstands avalanche breakdown events.
  • Logic Level Input: Can be driven directly by logic circuits.

Benefits:

  • High Efficiency: Low RDS(on) reduces power losses, leading to higher efficiency.
  • Reliable Operation: Designed for stable and dependable performance in demanding applications.
  • Reduced Heat Dissipation: Low RDS(on) minimizes heat generation.
  • Simplified Circuit Design: Logic level input simplifies gate drive requirements.
  • Robust Performance: Avalanche rating provides protection against voltage transients.

Additional Details:

The IPB100N06S2-05 is typically packaged in a D2PAK (TO-263) or similar surface-mount package. Key electrical characteristics include drain-source voltage (VDS), drain current (ID), gate-source voltage (VGS), and on-state resistance (RDS(on)). Consult the datasheet for precise specifications and application guidelines. Proper heat sinking is essential for reliable operation at high power levels.

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $3.0203 $60.4060
47+ $2.4775 $116.4425
73+ $2.4001 $175.2073
100+ $2.3227 $232.2700
129+ $2.2453 $289.6437
173+ $2.0132 $348.2836
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Availability: 8,000 pieces
MOQ: 20 pcs
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