The OptiMOS™ MOSFET (Metal Oxide) is a high-performance N-Channel FET Type electronic component from Infineon Technologies that is designed for use in Discrete Semiconductor Products, specifically in Transistors.

• Drain to Source Voltage (Vdss): 55 V
• Current - Continuous Drain (Id): 100A (Tc) @ 25°C
• Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
• Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 25 V
• Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Power Dissipation (Max): 300W (Tc)
• Win Source Part Number: 1001504-IPB100N06S2L05ATMA2