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Same model may have multiple batches, images only for reference.
IPB100N08S207ATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPB100N08S207ATMA1

Part No IPB100N08S207ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 100A TO263-3
Datasheet
IPB100N08S207ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 200nC @ 10V
Max Input Capacitance 4700pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 6.8 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1045773-IPB100N08S207ATMA1
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial
Ultra Librarian 3D Model Ultra Librarian IPB100N08S207ATMA1 CAD Model

Description

The IPB100N08S207ATMA1 is a MOSFET transistor manufactured by Infineon Technologies.

  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 100A @ 25°C
  • Maximum Power Dissipation: 300W
  • Applications: power supplies, motor control, and lighting
  • Package: PG-TO263-3-2
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Description: reliable and high-performance transistor that is suitable for use in demanding industrial applications

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Quantity Unit Price Ext. Price
23+ $2.1885 $50.3355
56+ $1.7957 $100.5592
87+ $1.7395 $151.3365
119+ $1.6834 $200.3246
154+ $1.6273 $250.6042
206+ $1.4590 $300.5540
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Availability: 2,000 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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