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Same model may have multiple batches, images only for reference.
IPB120N04S3-02 Real Image
Same model may have multiple batches, images only for reference.

IPB120N04S3-02

Part No IPB120N04S3-02
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 120A TO263-3
Datasheet
IPB120N04S3-02 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 230μA
Max Gate Charge 210nC @ 10V
Max Input Capacitance 14300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 2 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1045778-IPB120N04S3-02
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB120N04S3-02 CAD Model

Description

The Infineon Technologies IPB120N04S3-02 is an N-channel MOSFET transistor with a drain-source breakdown voltage of 40V and a continuous drain current of 120A (Tc).

  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 120A (Tc)
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max): 2 mOhm @ 80A, 10V
  • Gate-Source Threshold Voltage: 4V @ 230μA
  • Gate Charge (Max): 210nC @ 10V
  • Package: PG-TO263-2
  • Application: Discrete semiconductor products

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