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Same model may have multiple batches, images only for reference.
IPB12CNE8N G Real Image
Same model may have multiple batches, images only for reference.

IPB12CNE8N G

Part No IPB12CNE8N G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 85V 67A TO263-3
Datasheet
IPB12CNE8N G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 85V
Continuous Drain Current at 25°C 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 83μA
Max Gate Charge 64nC @ 10V
Max Input Capacitance 4340pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 12.9 mOhm @ 67A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1045782-IPB12CNE8N G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPB12CNE8N G CAD Model

Description

The Infineon Technologies IPB12CNE8N G is an N-channel MOSFET designed for use in discrete semiconductor products.

  • FET Type: N-Channel
  • Mounting Type: SMD (SMT)
  • Package / Case: PG-TO263-2
  • Voltage - Drain to Source Breakdown (Vdss): 85 V
  • Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
  • Vgs(th) (Max) @ Id: 4V @ 83μA
  • Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
  • Input Capacitance (Ciss) @ Vds: 4340 pF @ 40 V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 67A, 10V

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