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Same model may have multiple batches, images only for reference.
IPB180N04S3-02 Real Image
Same model may have multiple batches, images only for reference.

IPB180N04S3-02

Part No IPB180N04S3-02
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 180A TO263-7
Datasheet
IPB180N04S3-02 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 230μA
Max Gate Charge 210nC @ 10V
Max Input Capacitance 14300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 1.5 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-7-3
Dimension TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Win Source Part Number 040630-IPB180N04S3-02
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPB180N04S3-02 CAD Model

Description

The Infineon Technologies IPB180N04S3-02 MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is an N-Channel electronic component that is widely used in various applications.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 180A (Tc)
  • Package: PG-TO263-7-3
  • Gate-Source Threshold Voltage: 4V @ 230μA
  • Max Gate Charge: 210nC @ 10V
  • Status: Active
  • Category: Discrete Semiconductor Products
  • Use: Motor drives, power supplies, and inverters

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