The IPB180N06S4-H1 is a CoolMOS™ Power MOSFET from Infineon Technologies. It is a high-performance N-channel MOSFET designed for high efficiency and power density in a variety of applications. The device features ultra-low on-state resistance (RDS(on)) and low gate charge, resulting in reduced conduction and switching losses. It utilizes advanced superjunction technology to achieve superior performance and reliability. The IPB180N06S4-H1 is optimized for synchronous rectification in switched-mode power supplies (SMPS) and other high-frequency applications.

Applications

• Synchronous Rectification in SMPS
• DC-DC Converters
• Motor Drives
• Solar Inverters
• UPS Systems

Features

• N-Channel MOSFET
• Low On-State Resistance (RDS(on))
• Low Gate Charge (Qg)
• Fast Switching Speed
• Avalanche Rated
• 100% Avalanche Tested
• Pb-free and RoHS Compliant

Benefits

• Increased efficiency in power conversion systems
• Reduced conduction and switching losses
• Improved power density
• Enhanced system reliability
• Simplified thermal management

Additional Details

The IPB180N06S4-H1 is available in a PG-TO263-3 package (D2PAK). It is designed to operate over a wide temperature range, typically from -55°C to +175°C. The low RDS(on) minimizes conduction losses, while the low gate charge reduces switching losses. The avalanche rating and 100% avalanche testing ensure robust performance under transient conditions. The device is suitable for high-frequency applications due to its fast switching speed. The CoolMOS™ technology provides excellent performance and reliability in demanding power conversion systems.