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Same model may have multiple batches, images only for reference.
IPB35N12S3L26ATMA1
Same model may have multiple batches, images only for reference.

IPB35N12S3L26ATMA1

Part No IPB35N12S3L26ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CHANNEL_100+  /  
Datasheet
IPB35N12S3L26ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series *
Package Tape & Reel (TR)
Product Status Obsolete
Base Product Number IP35N
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001398600,INFINFIPB35N12S3L26ATMA1,2156-IPB35N12S3L26ATMA1
Standard Package 1,000
Win Source Part Number 1117158-IPB35N12S3L26ATMA1
Ultra Librarian 3D Model Ultra Librarian IPB35N12S3L26ATMA1 CAD Model

Description

The IPB35N12S3L26ATMA1 is a single N-channel MOSFET transistor from Infineon Technologies.

  • Application: Discrete Semiconductor
  • Drain to Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 27A (Ta) and 100A (Tc)
  • Maximum Rds On: 2.2mOhm @ 50A, 10V
  • Maximum Vgs(th): 2.3V @ 250μA
  • Mounting Technology: SMD (SMT)
  • Package: Tape & Reel
  • Temperature Range: -55°C to 175°C (TJ)

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