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Same model may have multiple batches, images only for reference.
IPB45N06S3L-13 Real Image
Same model may have multiple batches, images only for reference.

IPB45N06S3L-13

Part No IPB45N06S3L-13
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 45A TO-263
Datasheet
IPB45N06S3L-13 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.2V @ 30μA
Max Gate Charge 75nC @ 10V
Max Input Capacitance 3600pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 65W (Tc)
Maximum Rds On at Id,Vgs 13.1 mOhm @ 26A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1045794-IPB45N06S3L-13
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB45N06S3L-13 CAD Model

Description

The Infineon Technologies IPB45N06S3L-13 is a N-Channel MOSFET with a Drain-Source Breakdown Voltage of 55V and a Continuous Drain Current of 45A (Tc) at 25°C. Infineon Technologies IPB45N06S3L-13

  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 45A (Tc)
  • Case/Package: PG-TO263-3-2
  • Power Dissipation: 65W (Tc)
  • Maximum Rds On @ Id,Vgs: 13.1 mOhm @ 26A, 10V
  • Category: Discrete Semiconductor Products
  • Drive Voltage: 5V, 10V
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 175°C (TJ)
  • Maximum Gate-Source Voltage: ±16V
  • Maximum Gate Charge: 75nC @ 10V
  • Maximum Input Capacitance: 3600pF @ 25V

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