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Same model may have multiple batches, images only for reference.
IPB70N04S406ATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPB70N04S406ATMA1

Part No IPB70N04S406ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 70A TO263-3-2
Datasheet
IPB70N04S406ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 26μA
Max Gate Charge 32nC @ 10V
Max Input Capacitance 2550pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 58W (Tc)
Maximum Rds On at Id,Vgs 6.2 mOhm @ 70A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1045815-IPB70N04S406ATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB70N04S406ATMA1 CAD Model

Description

The Infineon Technologies 1045815-IPB70N04S406ATMA1 is a high-performance MOSFET that has a polarity of N-Channel.

  • Popularity: medium
  • Supply and Demand Status: balanced
  • Temperature Range: -55°C to 175°C (TJ)
  • Win Source Part Number: 1045815-IPB70N04S406ATMA1
  • Power Dissipation: 58W (Tc)
  • Maximum Rds On @ Id, Vgs: 6.2 mOhm @ 70A, 10V
  • Package: PG-TO263-3-2

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3772 $55.0880
90+ $1.1301 $101.7090
140+ $1.0947 $153.2580
190+ $1.0594 $201.2860
245+ $1.0241 $250.9045
330+ $0.9182 $303.0060
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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